成果推介｜北理工与中央民族大学联合中芯热成团队在Nature Photonics刊发论文：高精度微型高光谱成像芯片

新鲜出炉！北京理工大学与中央民族大学联合中芯热成研发出首款百万像素分辨率、可单极性偏置电压调控的短波红外量子点光谱芯片，为红外高光谱成像系统的微型化、集成化和实用化提供了全新解决方案。相关研究以“Hyperspectral Quantum-dot Image Sensors via In-pixel Reconfigurable Band-alignment”为题发表在Nature Photonics期刊上。 论文链接：https://doi.org/10.1038/s41566-026-01860-z

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中芯热成助力北理工团队刊发Adv.Sci.，实现宽波段高分辨超分成像核心突破

近日，北京理工大学团队在多光谱成像领域取得重大突破，其研发的CMOS集成四通道图像传感器相关研究成果，以“High-Resolution Multispectral Photovoltaic Imagers from Visible to Short-Wave Infrared”为题发表在Advanced Science期刊上。中芯热成作为论文完成单位之一，深度参与了该研究的器件制备、性能测试及封装验证等流程。

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成果推介｜西湖大学、浙江大学联合研发p-n同质结量子点红外传感器

近日，西湖大学和浙江大学研究团队成功开发出基于平面p-n同质结光电导体架构的硫化铅（PbS）量子点短波红外图像传感器。该项研究以“Quantum Dots Short-Wave Infrared Image Sensor with Enhanced Photoresponse Enabled by a Planar p–n Homojunction”为题发表在ACS Photonics期刊上。

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Wafer-Scale Fabrication of CMOS-Compatible Trapping-Mode Infrared Imagers with Colloidal Quantum Dots

Silicon-based complementary metal oxide semiconductor (CMOS) devices have dominated the technological revolution in the past decades. With increasing demands in machine vision, autonomous driving, and artificial intelligence, silicon CMOS imagers, as the major optical information input devices, face great challenges in spectral sensing ranges. In this paper, we demonstrate the development of CMOS-compatible infrared colloidal quantum-dot (CQD) imagers in the broadband short-wave and mid-wave infrared ranges (SWIR and MWIR, 1.5−5 μm). A new device architecture of trapping-mode detectors is proposed, fabricated, and demonstrated with lowered darkcurrents and improved responsivity. The CMOS-compatible fabrication process is completed with two-step sequential spin-coating processes of intrinsic and doped HgTe CQDs on an 8 in. CMOS readout wafer with photoresponse non-uniformity (PRNU) down to 4%, dead pixel rate of 0%, external quantum efficiency up to 175%, and detectivity as high as 2 × 1011 Jones for extended SWIR at 300 K and 8 × 1010 Jones for MWIR at 80 K. Both SWIR images and MWIR thermal images are demonstrated with great potential for semiconductor inspection, chemical identification, and temperature monitoring.

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Mercury telluride colloidal quantum-dot focal plane array with planar p-n junctions enabled by in situ electric field–activated doping

Colloidal quantum dot (CQD)–based photodetectors are promising alternatives to bulk semiconductor-based detectors to be monolithically integrated with complementary metal-oxide semiconductor readout integrated circuits avoiding high-cost epitaxial growth methods and complicated flip-bonding processes. To date, photovoltaic (PV) single-pixel detectors have led to the best performance with background-limit infrared photodetection performance. However, the nonuniform and uncontrollable doping methods and complex device configuration restrict the focal plane array (FPA) imagers to operate in PV mode. Here, we propose a controllable in situ electric field–activated doping method to construct lateral p-n junctions in the short-wave infrared (SWIR) mercury telluride (HgTe) CQD–based photodetectors with a simple planar configuration. The planar p-n junction FPA imagers with 640 × 512 pixels (15-μm pixel pitch) are fabricated and exhibit substantially improved performance compared with photoconductor imagers before activation. High-resolution SWIR infrared imaging is demonstrated with great potential for various applications including semiconductor inspection, food safety, and chemical analysis.

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